utc 2SD718 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 1 qw-r214-003,a high power amplifier application features *recommended for 45~50w audio frequency * amplifier output stage. *complementary to 2sb688. to-3p 1 1: base 2:collector 3: emitter absolute maximum ratings (ta=25 ) parameter symbol ratings unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 5 v collector current ic 10 a base current i b 1 a collector power dissipation (tc=25 ) pc 80 w junction temperature tj 150 storage temperature range tstg -55 ~150 electrical characteristics (ta=25 ,unless otherwise specified)) parameter symbol test condition min typ max unit collector-emitter breakdown voltage v (br)ceo ic=50ma,i b =0 120 v collector cut-off current i cbo v cb =120v,i e =0 10 a emitter cut-off current i ebo v eb =5v,ic=0 10 a dc current gain h fe v ce =5v,ic=1a 55 160 collector-emitter saturation voltage v ce(sat) ic=6a,i b =0.6a 2.0 v base-emitter voltage v be v ce =5v,ic=5a 1.5 v transition frequency f t v ce =5v,ic=1a 12 mhz collector output capacitance c ob v cb =10v,i e =0, f=1mhz 170 pf classification of hfe rank r o range 55-110 80-160
utc 2SD718 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 2 qw-r214-003,a electrical characteristics curves 12 8 6 4 2 0 2 collector-emitter voltage, v ce (v) collector current, ic (a) 8 12 ic - v ce 46 10 10 0 14 common emitter tc=25 c 400 300 200 100 50 0 i b =20ma 1k 300 100 50 30 0.01 0.03 collector current, ic (a) dc current gain, h fe 1 h fe - ic 0.1 0.3 3 500 10 10 tc=-25 c 1 0.3 0.1 0.05 0.03 0.01 0.03 collector current, ic (a) collector-emitter saturation voltage, vce(sat) (v) 1 v ce(sat) - ic 0.1 0.3 3 0.5 0.01 10 common emitter ic/i b =10 t c = 1 0 0 c tc=25 c tc=-25 c 100 60 40 20 040 ambient temperature, ta ( ) collector power dissipation, pc (w) 160 240 pc - ta 80 120 200 80 0 ta=tc infinite heat sink 300 ? 300 2mm ai heat sink 200 200 2mm ai heat sink 100 100 2mm ai heat sink no heat sink 1 3 4 5 2 1 2 3 4 5 tc=25 c tc=100 c common emitter vc e =5v 1 31030100 300 0.1 0.3 1 3 10 30 collector-emitter voltage, v ce (v) collector current, ic (a) safe operating area i c max(pulsed) * i c max(continuous) t=1ms * 10ms * 100ms * 500ms * dc o perat io n t c=2 5 d *single nonrepetitive pulse tc=25 c curves must be derated linearly wiht increase in temperature. v ceo max.
utc 2SD718 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 3 qw-r214-003,a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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